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个人简介

王佑    


特聘副研究员

研究方向:新型存储EDA技术,大规模STT-MRAM电路设计,硬件安全电路设计




详细介绍

教育经历

2007.09-2011.06,华中科技大学,光电信息工程,学士

2011.09-2013.10,法国巴黎第十一大学,电子通信与微传感器,硕士

2014.01-2017.02,法国国立高等电信学校,电子与通信,博士

工作经历

2017.3-2017.9, 巴黎高科电信学院, 微电子系, 博士后

2017.10-2020.7, 北京航空航天大学, 博士后, 合作导师: 赵巍胜

2020.8-至今, 北京航空航天大学合肥创新研究院,特聘副研究员

个人简历:

主要从事自旋电子器件、非易失性存储器、低功耗安全电路设计与电子电路的可靠性的研究。在电路与器件可靠性领域的期刊IEEE Transactions on electron devices 和 Microelectronics Reliability等国际权威期刊和国际会议上发表论文50余篇。所提出得MTJ击穿与耐久度分析模型(IEEE TED17,63-4),累计获引用92次。模型开源于www.spinlib.com和www.nanohub.org累计获8000余次访问,2000余次下载,获20多个国家的60余科研机构的下载使用和跟踪引用。

代表性论文:

  1. R. Ali, WS. Zhao, Y. Wang et al., “A Machine Learning Attack-Resilient Strong PUF Leveraging the Process Variation of MRAM”, IEEE Trans. on Circuits and Systems II: Express Briefs, 2022. (通讯作者)

  2. Y. Wang, H. Cai, WS. Zhao et al., “Magnetic Random-Access Memory-Based Approximate Computing: An Overview”, IEEE Nanotechnology Magazine, 3126093, 2021.

  3. R. Ali, H. Ma, Y. Wang et al., “A Reconfigurable Arbiter MPUF With High Resistance Against Machine Learning Attack”. IEEE Trans. on Magnetics 57 (10), 1-10, 2021. (通讯作者)

  4. B. Wu, D. Zhang, Y. Wang et al., “Radiation Hardened Design of STT-MRAM with High Recoverability from Double Node Upset”, IEEE ICTA2021, Zhuhai, 24-26 November 2021. (通讯作者)

  5. R. Ali, Y. Wang, WS. Zhao et al., “A Reconfigurable Arbiter PUF based on STT-MRAM”, 2021 IEEE ISCAS,Daegu, Korea, 22-28 May 2021. (通讯作者)

  6. H. Ma, Y. Wang, WS. Zhao et al., “SpinSim: A Computer Architecture-Level Variation Aware STT-MRAM Performance Evaluation Framework”, 2021 IEEE ISCAS,Daegu, Korea, 22-28 May 2021. (通讯作者)

  7. Y. Wang, WS. Zhao, H. Cai et al., “Reliability analysis and performance evaluation of STT-MRAM based physical unclonable function”, SPIN 10(2), 2020.

  8. Z. Hou, Y. Wang, H. Cai et al., “A Modeling Attack Resilient Physical Unclonable Function Based on STT-MRAM”, 2020 ACM GLSVLSI, Beijing, China, 7-9 September 2020. (通讯作者)

  9. Y. Wang, “Reliability assessment for MgO‐based STTRAM devices”, 2019 IEEE IPFA, Hangzhou, 2-5 July 2019. (邀请报告)

  10. R. Ali, Y. Wang, WS. Zhao et al., “Process Variation-Resilient STT-MTJ based TRNG using Linear Correcting Codes”, 2019 IEEE/ACM NANOARCH, Qingdao, China, 17-19 July 2019. (通讯作者)

  11. Y. Wang, Y. Zhang, YG. Zhang, WS. Zhao, H. Cai, L. Naviner, “Design Space Exploration of Magnetic Tunnel Junction based Stochastic Computing in Deep Learning”, 2018 ACM GLSVLSI, Chicago, USA, 23-25 May 2018.

  12. Y. Wang, H. Cai, WS. Zhao et al., “A non-Monte-Carlo Methodology for Variability Analysis of Magnetic Tunnel Junction Based Circuits”, IEEE Trans. on Magnetics 53 (3), 3400206, 2017.

  13. Y. Wang, H. Cai, WS. Zhao et al., “Compact model of dielectric breakdown in spin transfer torque magnetic tunnel junction”, IEEE Trans. on Electron Devices 63 (4), 1762-1767, 2016.

    Y. Wang, H. Cai, WS. Zhao et al., “A process-variation-resilientmethodology ofcircuit design by using asymmetrical forward body bias in 28nm FDSOI”, Microelectronics Reliability 64, 26-30, 2016.

友情链接: 北京航空航天…     北航研究生院     安徽省人民政府     合肥市人民政府     安徽合肥公共…     徽采商城     学习贯彻党的…     “两学一做”…     共产党员网     合肥新站高新…    

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