R. Ali, WS. Zhao, Y. Wang et al., “A Machine Learning Attack-Resilient Strong PUF Leveraging the Process Variation of MRAM”, IEEE Trans. on Circuits and Systems II: Express Briefs, 2022. (通讯作者)
Y. Wang, H. Cai, WS. Zhao et al., “Magnetic Random-Access Memory-Based Approximate Computing: An Overview”, IEEE Nanotechnology Magazine, 3126093, 2021.
R. Ali, H. Ma, Y. Wang et al., “A Reconfigurable Arbiter MPUF With High Resistance Against Machine Learning Attack”. IEEE Trans. on Magnetics 57 (10), 1-10, 2021. (通讯作者)
B. Wu, D. Zhang, Y. Wang et al., “Radiation Hardened Design of STT-MRAM with High Recoverability from Double Node Upset”, IEEE ICTA2021, Zhuhai, 24-26 November 2021. (通讯作者)
R. Ali, Y. Wang, WS. Zhao et al., “A Reconfigurable Arbiter PUF based on STT-MRAM”, 2021 IEEE ISCAS,Daegu, Korea, 22-28 May 2021. (通讯作者)
H. Ma, Y. Wang, WS. Zhao et al., “SpinSim: A Computer Architecture-Level Variation Aware STT-MRAM Performance Evaluation Framework”, 2021 IEEE ISCAS,Daegu, Korea, 22-28 May 2021. (通讯作者)
Y. Wang, WS. Zhao, H. Cai et al., “Reliability analysis and performance evaluation of STT-MRAM based physical unclonable function”, SPIN 10(2), 2020.
Z. Hou, Y. Wang, H. Cai et al., “A Modeling Attack Resilient Physical Unclonable Function Based on STT-MRAM”, 2020 ACM GLSVLSI, Beijing, China, 7-9 September 2020. (通讯作者)
Y. Wang, “Reliability assessment for MgO‐based STTRAM devices”, 2019 IEEE IPFA, Hangzhou, 2-5 July 2019. (邀请报告)
R. Ali, Y. Wang, WS. Zhao et al., “Process Variation-Resilient STT-MTJ based TRNG using Linear Correcting Codes”, 2019 IEEE/ACM NANOARCH, Qingdao, China, 17-19 July 2019. (通讯作者)
Y. Wang, Y. Zhang, YG. Zhang, WS. Zhao, H. Cai, L. Naviner, “Design Space Exploration of Magnetic Tunnel Junction based Stochastic Computing in Deep Learning”, 2018 ACM GLSVLSI, Chicago, USA, 23-25 May 2018.
Y. Wang, H. Cai, WS. Zhao et al., “A non-Monte-Carlo Methodology for Variability Analysis of Magnetic Tunnel Junction Based Circuits”, IEEE Trans. on Magnetics 53 (3), 3400206, 2017.
Y. Wang, H. Cai, WS. Zhao et al., “Compact model of dielectric breakdown in spin transfer torque magnetic tunnel junction”, IEEE Trans. on Electron Devices 63 (4), 1762-1767, 2016.
Y. Wang, H. Cai, WS. Zhao et al., “A process-variation-resilientmethodology ofcircuit design by using asymmetrical forward body bias in 28nm FDSOI”, Microelectronics Reliability 64, 26-30, 2016.