长期从事抗辐射集成电路加固设计，主要面向航空航天领域对高可靠、抗辐射、高性能的非易失性存储器的需求，围绕磁存储器开展辐射损伤及其电路抗辐射加固技术研究，相关研究为新型存储器抗辐射加固技术奠定理论基础。以第一作者身份发表SCI和国际会议论文8篇，主持国家级、省部级、横向项目等5项，包括国家自然科学基金青年项目1项、中国博士后科学基金2项（特别资助和面上项目）、北京市自然科学基金青年项目1项。参与北京市“空天高性能处理器”工程中心硬件平台搭建工作，服务于国家重大战略需求。

代表性论著:

[1] B. Wang et al., "Ionization and Displacement Damage on Nanostructure of Spin–Orbit Torque Magnetic Tunnel Junction," IEEE Transactions on Nuclear Science, 69 (1), Jan. 2022.

[2] B. Wang et al., "Soft Error Sensitivity of Magnetic Random Access Memory and Its Radiation Hardening Design,"（Invited）2021 18th International SoC Design Conference, 2021.

[3] B. Wang et al., "Radiation impact of swift heavy ion beams on double-interface CoFeB/MgO magnetic tunnel junctions." Applied Physics Letters 116.17(2020):172401.

[4] B. Wang et al., "Novel Radiation Hardening Read/Write Circuits Using Feedback Connections for Spin–Orbit Torque Magnetic Random Access Memory," IEEE Transactions on Circuits and Systems I: Regular Papers, 66 (5), May 2019.

[5] B. Wang et al., "Effects of Gamma Irradiation on Magnetic Properties of Double-Interface CoFeB/MgO Multifilms," IEEE Transactions on Nuclear Science, 66 (1), Jan. 2019.